050-7493 rev a 5-2005 apt40gp60b2dq2(g) typical performance curves maximum ratings all ratings: t c = 25c unless otherwise speci?ed. static electrical characteristics characteristic / test conditionscollector-emitter breakdown voltage (v ge = 0v, i c = 250a) gate threshold voltage (v ce = v ge , i c = 1ma, t j = 25c) collector-emitter on voltage (v ge = 15v, i c = 40a, t j = 25c) collector-emitter on voltage (v ge = 15v, i c = 40a, t j = 125c) collector cut-off current (v ce = 600v, v ge = 0v, t j = 25c) 2 collector cut-off current (v ce = 600v, v ge = 0v, t j = 125c) 2 gate-emitter leakage current (v ge = 20v) symbol v (br)ces v ge(th) v ce(on) i ces i ges units volts ana symbol v ces v ge i c1 i c2 i cm ssoa p d t j ,t stg t l apt40gp60b2dq2(g) 600 20 100 62 160 160a @ 600v 543 -55 to 150 300 unit volts amps watts c parametercollector-emitter voltage gate-emitter voltage continuous collector current 7 @ t c = 25c continuous collector current @ t c = 110c pulsed collector current 1 @ t c = 150c switching safe operating area @ t j = 150c total power dissipationoperating and storage junction temperature range max. lead temp. for soldering: 0.063" from case for 10 sec. apt website - http://www.advancedpower.com caution: these devices are sensitive to electrostatic discharge. proper hand ling procedures should be followed. min typ max 600 3 4.5 6 2.2 2.7 2.1 500 3000 100 the power mos 7 ? igbt is a new generation of high voltage power igbts. using punch through technology this igbt is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. ? low conduction loss ? 100 khz operation @ 400v, 41a ? low gate charge ? 200 khz operation @ 400v, 26a ? ultrafast tail current shutoff ? ssoa rated power mos 7 ? igbt 600v apt40gp60b2dq2 APT40GP60B2DQ2G* *g denotes rohs compliant, pb free terminal finish. ? t-max tm g c e c e g downloaded from: http:///
050-7493 rev a 5-2005 apt40gp60b2dq2(g) 1 repetitive rating: pulse width limited by maximum junction temperature. 2 for combi devices, i ces includes both igbt and fred leakages 3 see mil-std-750 method 3471. 4 e on1 is the clam ped inductive turn-on-energy of the igbt only, without the effect of a commutating diod e reverse recovery current adding to the igbt turn-on loss. (see figure 24.) 5 e on2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the igbt turn-on switching loss. (see figures 21, 22.) 6 e off is the clamped inductive turn-off energy measured in accordance with jedec standard jesd24-1. (see figures 21, 23.) repetitive rating: pulse width limited by maximum junction temperature. 7 continuous current limited by package lead temperature/ apt reserves the right to change, without notice, the speci?cations and information contained herein . thermal and mechanical characteristics unit c/w gm min typ max .23 .67 5.9 characteristicjunction to case (igbt) junction to case (diode) package weight symbol r jc r jc w t dynamic characteristics symbol c ies c oes c res v gep q g q ge q gc ssoa t d(on) t r t d(off) t f e on1 e on2 e off t d(on) t r t d(off) t f e on1 e on2 e off test conditions capacitance v ge = 0v, v ce = 25v f = 1 mhz gate charge v ge = 15v v ce = 300v i c = 40a t j = 150c, r g = 5 ?, v ge = 15v, l = 100h,v ce = 600v inductive switching (25c) v cc = 400v v ge = 15v i c = 40a r g = 5 ? t j = +25c inductive switching (125c) v cc =400v v ge = 15v i c = 40a r g = 5 ? t j = +125c characteristicinput capacitance output capacitance reverse transfer capacitance gate-to-emitter plateau voltage total gate charge 3 gate-emitter charge gate-collector ("miller ") charge switching safe operating area turn-on delay time current rise time turn-off delay time current fall time turn-on switching energy 4 turn-on switching energy (diode) 5 turn-off switching energy 6 turn-on delay timecurrent rise time turn-off delay time current fall time turn-on switching energy 4 4 turn-on switching energy (diode) 5 5 turn-off switching energy 6 min typ max 4610 395 25 7.5 135 30 40 160 20 29 64 45 385 645 350 450 20 29 90 70 385 970 615 950 unit pf v nc a ns j ns j downloaded from: http:///
050-7493 rev a 5-2005 apt40gp60b2dq2(g) typical performance curves 250s pulse test<0.5 % duty cycle t j = 125c t j = 25c t j = -55c v ge = 15v. 250s pulse test <0.5 % duty cycle t j = 125c t j = 25c t j = -55c t j = 125c t j = 25c t j = -55c bv ces , collector-to-emitter breakdown v ce , collector-to-emitter voltage (v) i c , collector current (a) i c , collector current (a) voltage (normalized) i c, dc collector current(a) v ce , collector-to-emitter voltage (v) v ge , gate-to-emitter voltage (v) i c , collector current (a) i c = 40a t j = 25c v ce = 480v v ce = 300v v ce = 120v v ce , collecter-to-emitter voltage (v) v ce , collecter-to-emitter voltage (v) figure 1, output characteristics(t j = 25c) figure 2, output characteristics (t j = 125c) v ge , gate-to-emitter voltage (v) gate charge (nc) figure 3, transfer characteristics figure 4, gate charge v ge , gate-to-emitter voltage (v) t j , junction temperature (c) figure 5, on state voltage vs gate-to- emitter voltage figure 6, on state voltage vs junction temperature t j , junction temperature (c) t c , case temperature (c) figure 7, breakdown voltage vs. junction temperature figure 8, dc collector current vs case temperature 0 0.5 1.0 1.5 2.0 2.5 3.0 0 0.5 1.0 1.5 2.0 2.5 3.0 0 1 2 3 4 5 6 7 8 9 10 0 20 40 60 80 100 120 140 6 8 10 12 14 16 -55 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 t j = 25c. 250s pulse test <0.5 % duty cycle i c = 80a i c = 40a i c = 20a i c = 80a i c = 40a i c = 20a 8070 60 50 40 30 20 10 0 1614 12 10 86 4 2 0 3.5 3 2.5 2 1.5 1 0.5 0 180160 140 120 100 8060 40 20 0 8070 60 50 40 30 20 10 0 250200 150 100 50 0 3.53.0 2.5 2.0 1.5 1.0 0.5 0 1.201.15 1.10 1.05 1.00 0.95 0.90 0.85 0.80 downloaded from: http:///
050-7493 rev a 5-2005 apt40gp60b2dq2(g) v ge =15v,t j =125c v ge =15v,t j =25c v ce = 400v r g = 5 ? l = 100 h v ce = 400v t j = 25c , t j =125c r g = 5 ? l = 100 h v ge = 15v t j = 25 or 125c,v ge = 15v switching energy losses (j) e on2 , turn on energy loss (j) t r, rise time (ns) t d(on) , turn-on delay time (ns) switching energy losses (j) e off , turn off energy loss (j) t f, fall time (ns) t d (off) , turn-off delay time (ns) i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure 9, turn-on delay time vs collector current figure 10, turn-off delay time vs collector current i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure 11, current rise time vs collector current figure 12, current fall time vs collector current i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure 13, turn-on energy loss vs collector current figure 14, turn off energy loss vs collector current r g , gate resistance (ohms) t j , junction temperature (c) figure 15, switching energy losses vs. gate resistance figure 16, switching energy losses vs junc tion temperature 0 20 40 60 80 100 0 20 40 60 80 100 0 20 40 60 80 100 0 20 40 60 80 100 0 20 40 60 80 90 0 20 40 60 80 100 0 10 20 30 40 50 0 25 50 75 100 125 r g = 5 ? , l = 100 h, v ce = 400v 2520 15 10 50 80 70 60 50 40 30 20 10 0 30002500 2000 1500 1000 500 0 40003500 3000 2500 2000 1500 1000 500 0 t j = 125c, v ge = 15v t j = 25c, v ge = 15v r g = 5 ? , l = 100 h, v ce = 400v v ce = 400v v ge = +15v r g = 5 ? t j = 125c,v ge = 15v t j = 25c,v ge = 15v v ce = 400v v ge = +15v r g = 5 ? t j = 125c, v ge = 15v t j = 25c, v ge = 15v 100 8060 40 20 0 100 8060 40 20 0 2000 1500 1000 500 0 30002500 2000 1500 1000 500 0 e on2, 80a e off, 80a e on2, 40a e off, 40a e on2, 20a e off, 20a v ce = 400v v ge = +15v t j = 125c v ce = 400v v ge = +15v r g = 5 ? e on2, 80a e off, 80a e off, 40a e on2, 40a e on2, 20a e off, 20a downloaded from: http:///
050-7493 rev a 5-2005 apt40gp60b2dq2(g) typical performance curves 0.250.20 0.15 0.10 0.05 0 z jc , thermal impedance (c/w) 0.3 0.9 0.7 single pulse rectangular pulse duration (seconds) figure 19a, maximum effective transient thermal impedance, junction-to-case vs pulse duration 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 10,000 1,000 500100 5010 180160 140 120 100 8060 40 20 0 c, capacitance ( p f) i c , collector current (a) v ce , collector-to-emitter voltage (volts) v ce , collector to emitter voltage figure 17, capacitance vs collector-to-emitter voltage figure 18,minimim switching safe operatin g area 0 10 20 30 40 50 0 100 200 300 400 500 600 700 figure 19b, transient thermal impedance model 20 30 40 50 60 70 80 f max , operating frequency (khz) i c , collector current (a) figure 20, operating frequency vs collector current t j = 125 c t c = 75 c d = 50 %v ce = 400v r g = 5 ? 260100 5010 c oes c res 0.5 0.1 0.05 f max = min (f max , f max2 ) 0.05 f max1 = t d(on) + t r + t d(off) + t f p diss - p cond e on2 + e off f max2 = p diss = t j - t c r jc c ies 0.01060.0868 0.133 0.00663f0.0106f 0.262f power (watts) junction temp. ( c) rc model case temperature. ( c) peak t j = p dm x z jc + t c duty factor d = t 1 / t 2 t 2 t 1 p dm note: downloaded from: http:///
050-7493 rev a 5-2005 apt40gp60b2dq2(g) i c a d.u.t. v ce figure 21, inductive switching test circuit v cc figure 22, turn-on switching waveforms and de?nitions figure 23, turn-off switching waveforms and de?nitions t j = 125c collector current collectorvoltage gate voltage switching energy 5% 10% t d(on) 90% 10% t r 5% t j = 125c collectorvoltage collector current gate voltage switching energy 0 90% t d(off) 10% t f 90% 5 % t r collector voltage collector current 10% 90% t j = 125 c 5% t d(on) gate voltage switching energy 10% 5 % t r collector voltage collector current 10% 90% t j = 125 c 5% t d(on) gate voltage switching energy 10% *driver same type as d.u.t. i c v clamp 100uh v test a a b d.u.t. driver* v ce figure 24, e on1 test circui t apt40dq60 downloaded from: http:///
050-7493 rev a 5-2005 apt40gp60b2dq2(g) typical performance curves characteristic / test conditionsmaximum average forward current (t c = 111c, duty cycle = 0.5) rms forward current (square wave, 50% duty)non-repetitive forward surge current (t j = 45c, 8.3ms) symbol i f (av) i f (rms) i fsm symbol v f characteristic / test conditions i f = 40a forward voltage i f = 80a i f = 40a, t j = 125c static electrical characteristics unit amps unit volts min typ max 2.0 2.5 1.7 apt40gp60b2dq2(g) 4063 320 dynamic characteristics maximum ratings all ratings: t c = 25c unless otherwise speci?ed. ultrafast soft recovery anti-parallel diode min typ max - 22 - 25 - 35 - 3 - - 160 - 480 - 6 - - 85 - 920 - 20 unit ns nc amps ns nc amps ns nc amps characteristicreverse recovery time reverse recovery time reverse recovery charge maximum reverse recovery current reverse recovery time reverse recovery charge maximum reverse recovery current reverse recovery time reverse recovery charge maximum reverse recovery current symbol t rr t rr q rr i rrm t rr q rr i rrm t rr q rr i rrm test conditions i f = 40a, di f /dt = -200a/ s v r = 400v, t c = 25 c i f = 40a, di f /dt = -200a/ s v r = 400v, t c = 125 c i f = 40a, di f /dt = -1000a/ s v r = 400v, t c = 125 c i f = 1a, di f /dt = -100a/ s, v r = 30v, t j = 25 c z jc , thermal impedance (c/w) 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 rectangular pulse duration (seconds) figure 25a. maximum effective transient thermal impedance, junction-to-case vs. pulse duration 0.700.60 0.50 0.40 0.30 0.20 0.10 0 0.5 single pulse 0.1 0.3 0.7 0.9 0.05 figure 25b, transient thermal impedance peak t j = p dm x z jc + t c duty factor d = t 1 / t 2 t 2 t 1 p dm note: 0.289 c/w 0.381 c/w 0.00448 j/ c 0.120 j/ c power (watts) rc model junction temp ( c) case temperature ( c) downloaded from: http:///
050-7493 rev a 5-2005 apt40gp60b2dq2(g) t j = 125 c v r = 400v 20a 40a 80a 180160 140 120 100 8060 40 20 0 2520 15 10 50 duty cycle = 0.5 t j = 175 c 0 25 50 75 100 125 150 25 50 75 100 125 150 175 1 10 100 200 8070 60 50 40 30 20 10 0 c j , junction capacitance k f , dynamic parameters (pf) (normalized to 1000a/ s) i f(av) (a) t j , junction temperature ( c) case temperature ( c) figure 30. dynamic parameters vs. junction temperature figure 31. maximum average fo rward current vs. casetemperature v r , reverse voltage (v) figure 32. junction capacitance vs. reverse voltage q rr , reverse recovery charge i f , forward current (nc) (a) i rrm , reverse recovery current t rr , reverse recovery time (a) (ns) t j = 175 c t j = -55 c t j = 25 c t j = 125 c t j = 125 c v r = 400v 80a 20a 40a 0 0.5 1 1.5 2 2.5 3 0 200 400 600 800 1000 1200 0 200 400 600 800 1000 1200 0 200 400 600 800 1000 1200 120100 8060 40 20 0 14001200 1000 800600 400 200 0 t j = 125 c v r = 400v 80a 40a 20a t rr q rr q rr t rr i rrm 1.41.2 1.0 0.8 0.6 0.4 0.2 0.0 200180 160 140 120 100 8060 40 20 0 v f , anode-to-cathode voltage (v) -di f /dt, current rate of change(a/ s) figure 26. forward current vs. forward voltage figure 27. reverse recovery time vs. current rate of change -di f /dt, current rate of change (a/ s) -di f /dt, current rate of change (a/ s) figure 28. reverse recovery charge vs. current rate of change figure 29. reverse recovery cu rrent vs. current rate of change downloaded from: http:///
050-7493 rev a 5-2005 apt40gp60b2dq2(g) typical performance curves apts products are covered by one or more of u.s.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign p atents. us and foreign patents pending. all rights reserved. e1 sac: tin, silver, copper 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) 4.50 (.177) max. 19.81 (.780) 20.32 (.800) 20.80 (.819) 21.46 (.845) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 5.45 (.215) bsc 2.87 (.113) 3.12 (.123) 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087) 2.59 (.102) 0.40 (.016) 0.79 (.031) dimensions in millimeters and (inches) 2-plcs. collector emitter gate collector(cathode) t-max? (b2) package outline apt40gt60br 4 3 1 2 5 5 zero 1 2 3 4 di f /dt - rate of diode current change through zero crossing. i f - forward conduction current i rrm - maximum reverse recovery current. t rr - reverse r ecovery time, measured from zero crossing where diode q rr - area under the curve defined by i rrm and t rr . current goes from positive to negative, to the point at which the straight line through i rrm and 0.25 i rrm passes through zero. figure 33. diode test circuit figure 34, diode reverse recovery waveform and definitions 0.25 i rrm pearson 2878 current transformer di f /dt adjust 30 h d.u.t. +18v 0v v r t rr / q rr waveform downloaded from: http:///
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